InGaAs/GaAs quantum well lasers with dry-etched mirror passivated by vacuum atomic layer epitaxy
نویسندگان
چکیده
We report measurements of strained InGaAs/GaAs quantum well laser diodes with electron cyclotron resonance ~ECR! plasma etched mirrors that are passivated and smoothed with a novel technique involving the selective area growth of GaAs by vacuum atomic layer epitaxy. The threshold current of as-cleaved, etched, and passivated devices has been studied and a significant improvement in mirror feedback is shown with the passivation and smoothing of etched mirrors oriented along the @001# planes. © 1994 American Institute of Physics.
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